Recent investigation on II-VI compound semiconductors.

Modelling (001) surfaces of II-VI semiconductors

First, we present a two-dimensional lattice gas model with anisotropic interactions which explains the experimentally observed transition from a dominant c(2× 2) ordering of the CdTe(001) surface to a local (2× 1) arrangement of the Cd atoms as an equilibrium phase transition. Its analysis by means of transfer-matrix and Monte Carlo techniques shows that the small energy difference of the compe...

Dynamical density response of II-VI semiconductors

We report results of ab initio calculations of the dynamical density response in CdTe, CdS, and CdSe. The calculated loss functions in all these semiconductors are rich in fine structures and show a rather unusual, negative dispersion of the loss peak due to the interaction of interband transitions with the plasmon. The detailed shape of the loss function in these compounds is strongly affected...

Nanocrystalline Alloys of Ii-vi Semiconductors

We present the synthesis and characterization of nanocrystalline II-VI semiconductors of mixed composition (CdSe/ZnSe, CdS) grown in fatty acid Langmuir-Schaefer multi-layer templates. The controlled production of i) homogeneous nanocrystalline Cd x Zn 1?x Se alloys and ii) heterogeneous mixtures of diierent pure composition II-VI semiconductors such as CdSe and ZnSe provides, in addition to th...

Crystalline phases of II-VI compound semiconductors grown by pulsed laser deposition

II-VI compound semiconductors, ZnS, ZnSe, CdS, CdSe, and CdTe, were grown epitaxially on ~111! and ~100! InP and GaAs substrates by excimer laser ablation. All of these films have good crystalline quality ~fully in-plane aligned! and mirror-like surface morphology. It was found that, on ~111!-oriented substrates, CdS and CdSe films were in the hexagonal phase with the c axis perpendicular to th...

Compound Semiconductors